Effect of Low-Energy Ion Implantation on Semiconductors

This paper provides a physical definition of the concept of ion
implantation and a schematic of an ion implantation setup. It is shown that
the key parameters for determining ion implantation modes are the energy
of accelerated ions and the irradiation dose. The results demonstrate that ions
exhibit significant lateral scattering, which leads to changes in the size of the
selective implantation regions, where theory allows for the calculation of ion
ranges in solids.